Conduction-cooled QCW stacked array Bernard Azout Key Features: QCW operation 60 W to 400 W QCW per diode bar Standard wavelength 795 to 830 nm, 880 nm, 9xx nm Space qualified technology (vacuum, irradiation) Low thermal resistance assembly package Mechanically robust, shock and vibration resistant
Dual QCW linear stacked array Bernard Azout Key Features: QCW operation Highly compact design Custom multi-stacks design available up to 5 stacks Wavelengths: 795-830 nm, 880 nm and 9xx nm Low thermal resistance assembly Mechanically robust, shock and vibration resistant Approved for defense and space applications
High temperature / multi-color QCW stacked array Bernard Azout Key Features: QCW operation Up to 400 W QCW per diode bar Hard sodder technology Wavelengths: 795 – 830 nm, 880 nm and 9xx nm Highly efficient over a large operating temperature range (- 40 to 80°) Options for multi-color emission (2 to 5 colors simultaneously) Low thermal resistance assembly Mechanically robust, shock and vibration resistant Collimation on request with a pitch of 400 µm
High-power diode lasers: CW-stacks Bernard Azout Key Features: Wavelength: 808 – 980nm Output power: 128 – 1440W Operation mode: CW Cooling: actively cooled / passively cooled Collimation: fast axis / fast axis and slow axis / without
High-power diode lasers: Epitaxy of wafers Bernard Azout Key Features: High power laser diodes between 630 nm and 1200 nm Customer-specific epitaxy on 2“, 3“, 4“ and 6“ GaAs substrates Layer structures in the Al-In-Ga-As-P material system High quality High reliability
High-power diode lasers: Mounted diode laser Bernard Azout Key Features: Wavelength: 808 – 1470nm Output power: 23 – 300W Operation mode: CW / QCW Cooling: actively cooled / passively cooled Collimation: fast axis / fast axis and slow axis / without Heatsink: actively cooled / cn / cs
High-power diode lasers: QCW-stacks Bernard Azout Key Features: Wavelength: 808 – 940nm Output power: 270 – 2400W Operation mode: QCW Cooling: actively cooled / passively cooled Collimation: fast axis / without
High-power diode lasers: Semiconductor Bernard Azout Key Features: Wavelength: 760 – 1060nm Output power: 6 – 500W Operation mode: CW / QCW Filling factor: – – 75% Resonator length: 0.6 – 4.0mm
Microchip: Picosecond – Nanosecond Pulsed Laser Johanna Taieb Key Features: Down to 300 ps 236.5 nm to 1064 nm Single shot to 100 kHz Up to 80 uJ Up to 50 kW M < 1.3 SLM
ML6600 – high-power laser system with multi-wavelength support Bernard Azout Key features: ML6600 laser system has 1-3 receptacle laser outputs. The control, cooling and driver are integrated, and the control supports both analog and digital modes. • Wavelengths: 400–2000 nm • Power range: up to 120 W, depending on the wavelength
Pulsed laser diode illuminator: Illuminator for high pulse repetition rate Bernard Azout Key Features: Energy and pulse width from 1mJ/100ns to 2.5mJ/200ns Up to 10 kHz pulse repetition rate Up to 20 W average power Single wavelength emission among 808, 915, 940 or 980 nm (other wavelengths in option) Fast axis collimation of diode bars included High reliability (> 100 x 109 shots) Robust design integrated into a closed protective housing
Pulsed laser diode illuminator: Illuminator for multi-wavelength emission Bernard Azout Key Features: Energy per diode and pulse width from 1mJ/80ns to 2mJ/130ns Up to 8mJ overall energy & 24W average power Up to 6kHz pulse repetition rate in continuous mode (up to 10kHz available in burst mode) Multi-wavelength emission possible with up to 4 wavelengths among 808, 915, 940 or 980 nm Fast axis collimation of diode bars included High reliability (> 100 x 109 shots) Robust design integrated into a closed protective housing
Pulsed laser diode illuminator: Illuminator for short pulses – packaged version Bernard Azout Key Features: Energy and pulse width from 1 mJ/30ns to 4mJ/100ns Maximal pulse repetition rate between 1 and 6 kHz Up to 6 W average power Single wavelength emission among 808, 915, 940 or 980 nm (other wavelengths in option) Fast axis collimation of diode bars included High reliability (> 100 x 109 shots) Robust design integrated into a closed protective housing
Pulsed laser diode illuminator: Illuminator for short pulses – ultra-compact OEM version Bernard Azout Key Features: Energy and pulse width from 1 mJ/30ns to 4mJ/100ns Maximal pulse repetition rate between 1 and 6 kHz Up to 6 W average power Single wavelength emission among 808, 915, 940 or 980 nm (other wavelengths in option) Various beam geometry available High reliability (> 100 x 109 shots) Easy to integrate, robust design
Pulsed laser diode illuminator: Illuminator for ultra-short pulses Bernard Azout Key features: Energy and pulse width from 2µJ/3ns to 10µJ/3ns Maximal pulse repetition rate between 100 and 500 kHz Up to 1 W average power Single wavelength emission among 808, 905, 915, 940 or 980 nm (other wavelengths in option) Fast-axis collimation upon request for one-bar diode design High reliability (> 100 x 109 shots) Robust design, shock and vibration resistant
QCW linear bar array Bernard Azout Key Features: QCW operation Highly compact design Conductively cooled package (water cooled also available) High conversion efficiency Wavelengths : 795 – 830 nm, 880 nm and 9xx nm Option with FAC lens High temperature option available Mechanically robust as well as shock and vibration resistant