Multi-Mode
Showing 1–16 of 24 results
Conduction-cooled QCW stacked array
Key Features:
- QCW operation
- 60 W to 400 W QCW per diode bar
- Standard wavelength 795 to 830 nm, 880 nm, 9xx nm
- Space qualified technology (vacuum, irradiation)
- Low thermal resistance assembly package
- Mechanically robust, shock and vibration resistant
DS3 Fiber Coupled Diode Laser System
The semiconductor laser subsystem can display power, current, temperature, pulse width, frequency, etc. through the LCD panel, and can be adjusted by the panel or remotely controlled by the RS232 serial port. The system has a high degree of integration and is easy to operate, and is mainly used in scientific research, system integration and other fields. At the same time, it can also meet other customized needs.
Dual QCW linear stacked array
Key Features:
- QCW operation
- Highly compact design
- Custom multi-stacks design available up to 5 stacks
- Wavelengths: 795-830 nm, 880 nm and 9xx nm
- Low thermal resistance assembly
- Mechanically robust, shock and vibration resistant
- Approved for defense and space applications
High temperature / multi-color QCW stacked array
Key Features:
- QCW operation
- Up to 400 W QCW per diode bar
- Hard sodder technology
- Wavelengths: 795 – 830 nm, 880 nm and 9xx nm
- Highly efficient over a large operating temperature range (- 40 to 80°)
- Options for multi-color emission (2 to 5 colors simultaneously)
- Low thermal resistance assembly
- Mechanically robust, shock and vibration resistant
- Collimation on request with a pitch of 400 µm
High-power diode lasers: CW-stacks
Key Features:
- Wavelength: 808 – 980nm
- Output power: 128 – 1440W
- Operation mode: CW
- Cooling: actively cooled / passively cooled
- Collimation: fast axis / fast axis and slow axis / without
High-power diode lasers: Epitaxy of wafers
Key Features:
- High power laser diodes between 630 nm and 1200 nm
- Customer-specific epitaxy on 2“, 3“, 4“ and 6“ GaAs substrates
- Layer structures in the Al-In-Ga-As-P material system
- High quality
- High reliability
High-power diode lasers: Mounted diode laser
Key Features:
- Wavelength: 808 – 1470nm
- Output power: 23 – 300W
- Operation mode: CW / QCW
- Cooling: actively cooled / passively cooled
- Collimation: fast axis / fast axis and slow axis / without
- Heatsink: actively cooled / cn / cs
High-power diode lasers: QCW-stacks
Key Features:
- Wavelength: 808 – 940nm
- Output power: 270 – 2400W
- Operation mode: QCW
- Cooling: actively cooled / passively cooled
- Collimation: fast axis / without
High-power diode lasers: Semiconductor
Key Features:
- Wavelength: 760 – 1060nm
- Output power: 6 – 500W
- Operation mode: CW / QCW
- Filling factor: – – 75%
- Resonator length: 0.6 – 4.0mm
Microchip: Picosecond – Nanosecond Pulsed Laser
Key Features:
- Down to 300 ps
- 236.5 nm to 1064 nm
- Single shot to 100 kHz
- Up to 80 uJ
- Up to 50 kW
- M < 1.3
- SLM
Mini Series Pluggable Diode Laser Subsystem
Pluggable design greatly facilitates user maintenance, avoids various troubles and high time costs caused by return-to-factory maintenance, and facilitates unified power management through DC input, which can be remotely controlled through RS232 serial por
ML6600 – high-power laser system with multi-wavelength support
Key features:
ML6600 laser system has 1-3 receptacle laser outputs. The control, cooling and driver are integrated, and the control supports both analog and digital modes.
• Wavelengths: 400–2000 nm
• Power range: up to 120 W, depending on the wavelength
Pulsed laser diode illuminator: Illuminator for high pulse repetition rate
Key Features:
- Energy and pulse width from 1mJ/100ns to 2.5mJ/200ns
- Up to 10 kHz pulse repetition rate
- Up to 20 W average power
- Single wavelength emission among 808, 915, 940 or 980 nm (other wavelengths in option)
- Fast axis collimation of diode bars included
- High reliability (> 100 x 109 shots)
- Robust design integrated into a closed protective housing
Pulsed laser diode illuminator: Illuminator for multi-wavelength emission
Key Features:
- Energy per diode and pulse width from 1mJ/80ns to 2mJ/130ns
- Up to 8mJ overall energy & 24W average power
- Up to 6kHz pulse repetition rate in continuous mode (up to 10kHz available in burst mode)
- Multi-wavelength emission possible with up to 4 wavelengths among 808, 915, 940 or 980 nm
- Fast axis collimation of diode bars included
- High reliability (> 100 x 109 shots)
- Robust design integrated into a closed protective housing
Pulsed laser diode illuminator: Illuminator for short pulses – packaged version
Key Features:
- Energy and pulse width from 1 mJ/30ns to 4mJ/100ns
- Maximal pulse repetition rate between 1 and 6 kHz
- Up to 6 W average power
- Single wavelength emission among 808, 915, 940 or 980 nm (other wavelengths in option)
- Fast axis collimation of diode bars included
- High reliability (> 100 x 109 shots)
- Robust design integrated into a closed protective housing























