1030-1180 nm DFB laser Johanna Taieb Key Features: Wide wavelength lineup: 1030, 1053, 1064, 1080, 1120, 1180 nm and more Stable single mode operation Short pulse (picoseconds, nanoseconds) 400 mW to 1 nanosecond high light power 14-pin butterfly / 7-pin SMPM module Picosecond pulsed driver board 1060 nm gain chip for tunable laser Application: Seeder of fiber laser for machining, LIDAR
1030-1180 nm DFB laser Johanna Taien Key Features: Wide wavelength lineup: 1030, 1053, 1064, 1080, 1120, 1180 nm and more Stable single mode operation Short pulse (picoseconds, nanoseconds) 400 mW to 1 nanosecond high light power 14-pin butterfly / 7-pin SMPM module Picosecond pulsed driver board 1060 nm gain chip for tunable laser Application: Seeder of fiber laser for machining, LIDAR
1240-1300 nm quantum dot laser (including high-temperature type quantum dot laser) Johanna Taieb Key Features: Quantum dot FP/DFB laser Wavelengths from 1240 to 1310 nm High-temperature operation (100-200℃ or higher) Excellent high-temperature stability Excellent optical feedback tolerance TO-56 / chip Applications: data communication, silicon photonics light source, sensor (high temperature)
532-594 nm compact visible lasers Johanna Taieb Key Features: Wavelengths: 532, 561, and 594 nm Light output: 5, 20, 30, and 50 mW Low power consumption Short pulse operation (nanoseconds, 50 picoseconds) Compact package Option: Fiber pigtail Applications: Light source for biomedical equipment, sensors
640 – 940 nm high power FP lasers Johanna Taieb Key Features: 640 nm, 30 mW @50℃, 80 mW @30℃ 660 nm, 50/100/120 mW@60℃, 50 mW @70℃ 785 nm, 100 mW @70℃ 830 nm, 210 mW @70℃ 905 nm, 40/100 mW @70℃/li> 940 nm, 285 mW @70℃ TO-56 package Built-in monitor PD Applications: Industrial applications, machine vision, leveling instruments, particle counters,various kinds of sensors
Conduction-cooled QCW stacked array Bernard Azout Key Features: QCW operation 60 W to 400 W QCW per diode bar Standard wavelength 795 to 830 nm, 880 nm, 9xx nm Space qualified technology (vacuum, irradiation) Low thermal resistance assembly package Mechanically robust, shock and vibration resistant
Dual QCW linear stacked array Bernard Azout Key Features: QCW operation Highly compact design Custom multi-stacks design available up to 5 stacks Wavelengths: 795-830 nm, 880 nm and 9xx nm Low thermal resistance assembly Mechanically robust, shock and vibration resistant Approved for defense and space applications
High temperature / multi-color QCW stacked array Bernard Azout Key Features: QCW operation Up to 400 W QCW per diode bar Hard sodder technology Wavelengths: 795 – 830 nm, 880 nm and 9xx nm Highly efficient over a large operating temperature range (- 40 to 80°) Options for multi-color emission (2 to 5 colors simultaneously) Low thermal resistance assembly Mechanically robust, shock and vibration resistant Collimation on request with a pitch of 400 µm
High-power diode lasers: CW-stacks Bernard Azout Key Features: Wavelength: 808 – 980nm Output power: 128 – 1440W Operation mode: CW Cooling: actively cooled / passively cooled Collimation: fast axis / fast axis and slow axis / without
High-power diode lasers: Epitaxy of wafers Bernard Azout Key Features: High power laser diodes between 630 nm and 1200 nm Customer-specific epitaxy on 2“, 3“, 4“ and 6“ GaAs substrates Layer structures in the Al-In-Ga-As-P material system High quality High reliability
High-power diode lasers: Mounted diode laser Bernard Azout Key Features: Wavelength: 808 – 1470nm Output power: 23 – 300W Operation mode: CW / QCW Cooling: actively cooled / passively cooled Collimation: fast axis / fast axis and slow axis / without Heatsink: actively cooled / cn / cs
High-power diode lasers: QCW-stacks Bernard Azout Key Features: Wavelength: 808 – 940nm Output power: 270 – 2400W Operation mode: QCW Cooling: actively cooled / passively cooled Collimation: fast axis / without
High-power diode lasers: Semiconductor Bernard Azout Key Features: Wavelength: 760 – 1060nm Output power: 6 – 500W Operation mode: CW / QCW Filling factor: – – 75% Resonator length: 0.6 – 4.0mm
Pulsed laser diode illuminator: Illuminator for high pulse repetition rate Bernard Azout Key Features: Energy and pulse width from 1mJ/100ns to 2.5mJ/200ns Up to 10 kHz pulse repetition rate Up to 20 W average power Single wavelength emission among 808, 915, 940 or 980 nm (other wavelengths in option) Fast axis collimation of diode bars included High reliability (> 100 x 109 shots) Robust design integrated into a closed protective housing
Pulsed laser diode illuminator: Illuminator for multi-wavelength emission Bernard Azout Key Features: Energy per diode and pulse width from 1mJ/80ns to 2mJ/130ns Up to 8mJ overall energy & 24W average power Up to 6kHz pulse repetition rate in continuous mode (up to 10kHz available in burst mode) Multi-wavelength emission possible with up to 4 wavelengths among 808, 915, 940 or 980 nm Fast axis collimation of diode bars included High reliability (> 100 x 109 shots) Robust design integrated into a closed protective housing
Pulsed laser diode illuminator: Illuminator for short pulses – packaged version Bernard Azout Key Features: Energy and pulse width from 1 mJ/30ns to 4mJ/100ns Maximal pulse repetition rate between 1 and 6 kHz Up to 6 W average power Single wavelength emission among 808, 915, 940 or 980 nm (other wavelengths in option) Fast axis collimation of diode bars included High reliability (> 100 x 109 shots) Robust design integrated into a closed protective housing