Showing 33–48 of 84 results
Lea GuezThe semiconductor laser subsystem can display power, current, temperature, pulse width, frequency, etc. through the LCD panel, and can be adjusted by the panel or remotely controlled by the RS232 serial port. The system has a high degree of integration and is easy to operate, and is mainly used in scientific research, system integration and other fields. At the same time, it can also meet other customized needs.
Bernard AzoutKey Features:
QCW operation
Highly compact design
Custom multi-stacks design available up to 5 stacks
Wavelengths: 795-830 nm, 880 nm and 9xx nm
Low thermal resistance assembly
Mechanically robust, shock and vibration resistant
Approved for defense and space applications
Michael IluzKey Features:
Narrow Linewidth: ≤ 0.5 MHz
High Power Stability: ≤ 2.0 %
High Spectral Stability: ± 1.0 pm
Designed for Integration
Michael IluzKey Features:
Narrow Linewidth: ≤ 0.5 MHz
High Power Stability: ≤ 2.0 %
High Spectral Stability: ± 1.0 pm
Excellent Beam Quality
Michael IluzKey Features:
High-bandwidth PID or PI²D control
All-analogue signal processing with propagation delay 40ns
Parallel FAST and SLOW control loops
Feedback to both current and piezo
Flexible control of loop parameters
High-bandwidth external modulation
Internal ramp generator
Two low-noise photodiode power supplies
TTL control
INFOKEY FEATURES:
Ultra-narrow Instantaneous Laser Linewidth Ultra-Low Phase/Frequency Noise 370 nm – 4500 nm Wavelength Low Vibration Sensitivity Low Residual Amplitude Modulation Wavelength Stability Compact Package Integrated Driver/Controller USB or RS-232 Control Interface
Bernard AzoutKey Features:
QCW operation
Up to 400 W QCW per diode bar
Hard sodder technology
Wavelengths: 795 – 830 nm, 880 nm and 9xx nm
Highly efficient over a large operating temperature range (- 40 to 80°)
Options for multi-color emission (2 to 5 colors simultaneously)
Low thermal resistance assembly
Mechanically robust, shock and vibration resistant
Collimation on request with a pitch of 400 µm
Bernard AzoutKey Features:
Wavelength : 808 – 980nmOutput power : 128 – 1440WOperation mode : CWCooling : actively cooled / passively cooledCollimation : fast axis / fast axis and slow axis / without
Bernard AzoutKey Features:
High power laser diodes between 630 nm and 1200 nm
Customer-specific epitaxy on 2“, 3“, 4“ and 6“ GaAs substrates
Layer structures in the Al-In-Ga-As-P material system
High quality
High reliability
Bernard AzoutKey Features:
Wavelength : 808 – 1470nmOutput power : 23 – 300WOperation mode : CW / QCWCooling : actively cooled / passively cooledCollimation : fast axis / fast axis and slow axis / withoutHeatsink : actively cooled / cn / cs
Bernard Azout
Key Features:
Wavelength : 808 – 940nmOutput power : 270 – 2400WOperation mode : QCWCooling : actively cooled / passively cooledCollimation : fast axis / without
Bernard AzoutKey Features:
Wavelength : 760 – 1060nmOutput power : 6 – 500WOperation mode : CW / QCWFilling factor : – – 75%Resonator length : 0.6 – 4.0mm
Bernard AzoutKey Features:
CE and ETL mark
Comes with regulatory documentation
CB tested to US/CA, EU, CH, Japan, SG, China
Fast product launches
Service and life-cycle support
Lowest TCO
Michael IluzKey Features:
Ultra-low noise
Transform-limited pulses
Compact industrial design
Harsh environment resistant
User friendly
Turnkey system
24/7 operation
All-in-one system
VIDEO
Johanna TaiebKey Features:
Down to 300 ps
236.5 nm to 1064 nm
Single shot to 100 kHz
Up to 80 uJ
Up to 50 kW
M < 1.3
SLM
