Showing 33–48 of 86 results
Bernard Azout
Key Features:
- QCW operation
- Highly compact design
- Custom multi-stacks design available up to 5 stacks
- Wavelengths: 795-830 nm, 880 nm and 9xx nm
- Low thermal resistance assembly
- Mechanically robust, shock and vibration resistant
- Approved for defense and space applications
Michael Iluz
Key Features:
- Narrow Linewidth: ≤ 0.5 MHz
- High Power Stability: ≤ 2.0 %
- High Spectral Stability: ± 1.0 pm
- Designed for Integration
Michael Iluz
Key Features:
- Narrow Linewidth: ≤ 0.5 MHz
- High Power Stability: ≤ 2.0 %
- High Spectral Stability: ± 1.0 pm
- Excellent Beam Quality
Michael Iluz
Key Features:
- High-bandwidth PID or PI²D control
- All-analogue signal processing with propagation delay 40ns
- Parallel FAST and SLOW control loops
- Feedback to both current and piezo
- Flexible control of loop parameters
- High-bandwidth external modulation
- Internal ramp generator
- Two low-noise photodiode power supplies
- TTL control
INFO
KEY FEATURES:
- Ultra-narrow Instantaneous Laser Linewidth
- Ultra-Low Phase/Frequency Noise
- 370 nm – 4500 nm Wavelength
- Low Vibration Sensitivity
- Low Residual Amplitude Modulation
- Wavelength Stability
- Compact Package
- Integrated Driver/Controller
- USB or RS-232 Control Interface
Bernard Azout
Key Features:
- QCW operation
- Up to 400 W QCW per diode bar
- Hard sodder technology
- Wavelengths: 795 – 830 nm, 880 nm and 9xx nm
- Highly efficient over a large operating temperature range (- 40 to 80°)
- Options for multi-color emission (2 to 5 colors simultaneously)
- Low thermal resistance assembly
- Mechanically robust, shock and vibration resistant
- Collimation on request with a pitch of 400 µm
Bernard Azout
Key Features:
- Wavelength: 808 – 980nm
- Output power: 128 – 1440W
- Operation mode: CW
- Cooling: actively cooled / passively cooled
- Collimation: fast axis / fast axis and slow axis / without
Bernard Azout
Key Features:
- High power laser diodes between 630 nm and 1200 nm
- Customer-specific epitaxy on 2“, 3“, 4“ and 6“ GaAs substrates
- Layer structures in the Al-In-Ga-As-P material system
- High quality
- High reliability
Bernard Azout
Key Features:
- Wavelength: 808 – 1470nm
- Output power: 23 – 300W
- Operation mode: CW / QCW
- Cooling: actively cooled / passively cooled
- Collimation: fast axis / fast axis and slow axis / without
- Heatsink: actively cooled / cn / cs
Bernard Azout
Key Features:
- Wavelength: 808 – 940nm
- Output power: 270 – 2400W
- Operation mode: QCW
- Cooling: actively cooled / passively cooled
- Collimation: fast axis / without
Bernard Azout
Key Features:
- Wavelength: 760 – 1060nm
- Output power: 6 – 500W
- Operation mode: CW / QCW
- Filling factor: – – 75%
- Resonator length: 0.6 – 4.0mm
Michael Iluz
Key Features:
- Wavelength 370nm – 1080nm
- Output power up to 1W, depending on wavelength
- High stability wire-cut flexure alignment with simple optimisation procedure
- User-replaceable amplifier diode
- Astigmatic correction
Bernard Azout
Key Features:
- CE and ETL mark
- Comes with regulatory documentation
- CB tested to US/CA, EU, CH, Japan, SG, China
- Fast product launches
- Service and life-cycle support
- Lowest TCO
Michael Iluz
Key Features:
- Ultra-low noise
- Transform-limited pulses
- Compact industrial design
- Harsh environment resistant
- User friendly
- Turnkey system
- 24/7 operation
- All-in-one system
Johanna Taieb
Key Features:
- Down to 300 ps
- 236.5 nm to 1064 nm
- Single shot to 100 kHz
- Up to 80 uJ
- Up to 50 kW
- M < 1.3
- SLM
