976nm 9W Wavelength-Stabilized Fiber Coupled Diode Laser – K976AB2RN-9.000W Johanna Taieb Key Features: 976nm wavelength 9W output power 105µm fiber core diameter 0.22NA Narrow bandwidth △≤0.7nm 1020nm-1200nm feedback protection
Aero – High Energy DPSS Lasers Johanna Taieb Key Features: Up to 200mJ @ 1064nm Up to 100 mJ @ 532 nm 10ns to 30 ns Single shot up to 200 Hz Multiple wavelengths configurations
ALCOR SERIES – ULTRA COMPACT FEMTOSECOND LASER Michael Iluz Key Features: High repetition rate : 80 MHz High power : from 1W to 2W 100 fs – 180 fs
Conduction-cooled QCW stacked array Bernard Azout Key Features: QCW operation 60 W to 400 W QCW per diode bar Standard wavelength 795 to 830 nm, 880 nm, 9xx nm Space qualified technology (vacuum, irradiation) Low thermal resistance assembly package Mechanically robust, shock and vibration resistant
DIADEM SERIES – COMPACT HIGH-ENERGY FEMTOSECOND LASER Michael Iluz Key Features: High energy Compact Highly configurable pulses Air-cooled
Dual QCW linear stacked array Bernard Azout Key Features: QCW operation Highly compact design Custom multi-stacks design available up to 5 stacks Wavelengths: 795-830 nm, 880 nm and 9xx nm Low thermal resistance assembly Mechanically robust, shock and vibration resistant Approved for defense and space applications
High temperature / multi-color QCW stacked array Bernard Azout Key Features: QCW operation Up to 400 W QCW per diode bar Hard sodder technology Wavelengths: 795 – 830 nm, 880 nm and 9xx nm Highly efficient over a large operating temperature range (- 40 to 80°) Options for multi-color emission (2 to 5 colors simultaneously) Low thermal resistance assembly Mechanically robust, shock and vibration resistant Collimation on request with a pitch of 400 µm
High-power diode lasers: CW-stacks Bernard Azout Key Features: Wavelength: 808 – 980nm Output power: 128 – 1440W Operation mode: CW Cooling: actively cooled / passively cooled Collimation: fast axis / fast axis and slow axis / without
High-power diode lasers: Epitaxy of wafers Bernard Azout Key Features: High power laser diodes between 630 nm and 1200 nm Customer-specific epitaxy on 2“, 3“, 4“ and 6“ GaAs substrates Layer structures in the Al-In-Ga-As-P material system High quality High reliability
High-power diode lasers: Mounted diode laser Bernard Azout Key Features: Wavelength: 808 – 1470nm Output power: 23 – 300W Operation mode: CW / QCW Cooling: actively cooled / passively cooled Collimation: fast axis / fast axis and slow axis / without Heatsink: actively cooled / cn / cs
High-power diode lasers: QCW-stacks Bernard Azout Key Features: Wavelength: 808 – 940nm Output power: 270 – 2400W Operation mode: QCW Cooling: actively cooled / passively cooled Collimation: fast axis / without
High-power diode lasers: Semiconductor Bernard Azout Key Features: Wavelength: 760 – 1060nm Output power: 6 – 500W Operation mode: CW / QCW Filling factor: – – 75% Resonator length: 0.6 – 4.0mm
Laser system ML7710 Bernard Azout Key Features: CE and ETL mark Comes with regulatory documentation CB tested to US/CA, EU, CH, Japan, SG, China Fast product launches Service and life-cycle support Lowest TCO
Microchip: Picosecond – Nanosecond Pulsed Laser Johanna Taieb Key Features: Down to 300 ps 236.5 nm to 1064 nm Single shot to 100 kHz Up to 80 uJ Up to 50 kW M < 1.3 SLM
Mikan – Air-cooled high power ultrafast oscillator Bernard Azout Key Features: Air-cooled system Ultra compact Ideal for biophotonics and imaging applications Optional green output