Showing 1–16 of 221 results

10 Channel Electric Optical Delay Line Device

 Lea Guez

Key Features

  • Unique multi-channel optical delay mechanism
  • Continuous and highly stable delay adjustment
  • Wide delay range with high precision control
  • Exceptional delay accuracy for advanced signal alignment
  • High system reliability for long-term operation
  • Compact and robust design suitable for integration

Applications

This device is widely used in cutting-edge optical and microwave photonics systems, including:

  • Radar testing and calibration systems
  • Phased array antenna beamforming
  • Optical Coherence Tomography (OCT)
  • Optical interference measurement systems
  • Fiber optic sensing applications

100kW diode source: High efficiency high power diode laser source

 Bernard Azout

Key Features:

  • Up to 120 kW in one line @ 940 & 980 nm
  • Up to 250 kW @ 880 nm
  • Up to 1 MW in 8 lines matric array
  • 880, 940 and 980 nm available
  • Driver available in a separate rack or integrated to the source for 100 kW version
  • Operating with non DI water from +10°C to +40°C
  • Bar pitch 400, 800 or 1.2 mm upon energy per pulse
  • Lifetime warranties from 1 to 10 Gshots upon energy per pulse

1030-1180 nm DFB laser

 Lea Guez

Key Features:

  • Wide wavelength lineup: 1030, 1053, 1064, 1080, 1120, 1180 nm and more
  • Stable single mode operation
  • Short pulse (picoseconds, nanoseconds)
  • 400 mW to 1 nanosecond high light power
  • 14-pin butterfly / 7-pin SMPM module
  • Picosecond pulsed driver board
  • 1060 nm gain chip for tunable laser
  • Application: Seeder of fiber laser for machining, LIDAR

1030-1180 nm DFB laser

 Lea Guez

Key Features:

  • Wide wavelength lineup: 1030, 1053, 1064, 1080, 1120, 1180 nm and more
  • Stable single mode operation
  • Short pulse (picoseconds, nanoseconds)
  • 400 mW to 1 nanosecond high light power
  • 14-pin butterfly / 7-pin SMPM module
  • Picosecond pulsed driver board
  • 1060 nm gain chip for tunable laser
  • Application: Seeder of fiber laser for machining, LIDAR

405nm Fiber Coupled Diode Laser System

 Lea Guez

The 405 nm semiconductor laser subsystem delivers an output power ranging from 12 W to 50 W and is widely used in LDI/maskless lithography and other applications. The system is fully designed with a 400 µm pluggable fiber, allowing easy maintenance for users. In addition, the spot homogenization design makes it particularly well suited for LDI applications.