Showing 17–32 of 37 results
Johanna TaiebKey Features:
915nm wavelength
300W output power
200µm fiber core diameter
0.22N.A.
1020nm-1200nm feedback protection
Johanna TaiebKey Features:
10W output power
976nm wavelength
Standard fiber coupling for 200μm/ 0.22NA
Customer options：
Johanna TaiebKey Features:
976nm wavelength
140W output power
106.5µm fiber core diameter
0.22NA
1040nm~1200nm feedback protection
Johanna TaiebKey Features:
976nm wavelength
27W output power
105µm fiber core diameter
0.22N.A.
Narrow bandwidth △λ<0.7nm
1040nm-1200nm feedback protection
Johanna TaiebKey Features:
976nm wavelength
330W output power
200µm fiber core diameter
0.22N.A
1020nm-1200nm feedback protection
Johanna TaiebKey Features:
976nm wavelength
9W output power
105µm fiber core diameter
0.22NA
Narrow bandwidth △≤0.7nm
1020nm-1200nm feedback protection
Lea GuezThe semiconductor laser subsystem can display power, current, temperature, pulse width, frequency, etc. through the LCD panel, and can be adjusted by the panel or remotely controlled by the RS232 serial port. The system has a high degree of integration and is easy to operate, and is mainly used in scientific research, system integration and other fields. At the same time, it can also meet other customized needs.
Michael IluzKey Features:
Narrow Linewidth: ≤ 0.5 MHz
High Power Stability: ≤ 2.0 %
High Spectral Stability: ± 1.0 pm
Designed for Integration
Michael IluzKey Features:
Narrow Linewidth: ≤ 0.5 MHz
High Power Stability: ≤ 2.0 %
High Spectral Stability: ± 1.0 pm
Excellent Beam Quality
Michael IluzKey Features:
High-bandwidth PID or PI²D control
All-analogue signal processing with propagation delay 40ns
Parallel FAST and SLOW control loops
Feedback to both current and piezo
Flexible control of loop parameters
High-bandwidth external modulation
Internal ramp generator
Two low-noise photodiode power supplies
TTL control
Bernard AzoutKey Features:
Wavelength : 808 – 980nmOutput power : 128 – 1440WOperation mode : CWCooling : actively cooled / passively cooledCollimation : fast axis / fast axis and slow axis / without
Bernard AzoutKey Features:
High power laser diodes between 630 nm and 1200 nm
Customer-specific epitaxy on 2“, 3“, 4“ and 6“ GaAs substrates
Layer structures in the Al-In-Ga-As-P material system
High quality
High reliability
Bernard AzoutKey Features:
Wavelength : 808 – 1470nmOutput power : 23 – 300WOperation mode : CW / QCWCooling : actively cooled / passively cooledCollimation : fast axis / fast axis and slow axis / withoutHeatsink : actively cooled / cn / cs
Bernard Azout
Key Features:
Wavelength : 808 – 940nmOutput power : 270 – 2400WOperation mode : QCWCooling : actively cooled / passively cooledCollimation : fast axis / without
Bernard AzoutKey Features:
Wavelength : 760 – 1060nmOutput power : 6 – 500WOperation mode : CW / QCWFilling factor : – – 75%Resonator length : 0.6 – 4.0mm
Bernard AzoutKey Features:
CE and ETL mark
Comes with regulatory documentation
CB tested to US/CA, EU, CH, Japan, SG, China
Fast product launches
Service and life-cycle support
Lowest TCO
